| 摘要 |
PURPOSE: To lower power consumption at a predetermined current density by confining most of high temperature electrons injected to a base in a space in the base region, allowing only a slight portion of electrons injected reaching the surface of an extrinsic base region, thereby reducing the width of the emitter stripe. CONSTITUTION: A transistor 10 comprises a substrate 11, a collector contact region 18 in an epitaxial state with an adjacent region or substrate, a collector depletion region 14, a base region 13 and an emitter region 12. And high temperature electrons injected to the base 13 of the transistor are not diffused in the base 13 and are confined spatially in the form of a beam of high temperature electrons. In the electron transport in this state, the possibility of the surface re-coupling is decreased, and the emitter stripe width is decreased without reducing the DC electric gainβaccompanying GaAs bipolar transistor (HBT). HBT having a narrow emitter stripe obtained in a method stated above has a relatively small power consumption compared to the operating current density given and can be suited to a large-scale integration.
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