发明名称 ACTIVE MATRIX SUBSTRATE
摘要 <p>PURPOSE:To improve the yield of production of capacitors for charge holding by connecting 2 capacitors in series to constitute the capacitor for charge holding. CONSTITUTION:Electrodes 12, 13 are formed of conductive films on a substrate 11 and further, an insulating film 14 consisting of SiO2, PSG, etc., is formed by a CVD method, etc., thereon. After a contact through-hole 15 is formed, electrodes 15, 16 are formed of the conductive film. The capacitor formed of the electrodes 12, 15 and the capacitor formed of the electrodes 13, 16 are connected in series through the contact 15. The probability at which the series capacitors are simultaneously defective is lowered in this way and the yield is improved.</p>
申请公布号 JPH02124536(A) 申请公布日期 1990.05.11
申请号 JP19880276272 申请日期 1988.11.02
申请人 HITACHI LTD 发明人 YOSHIMURA MASAO;ONO KIKUO;SUZUKI TAKASHI;OWADA JUNICHI;KITAJIMA MASAAKI
分类号 G02F1/136;G02F1/1368;H01L27/12 主分类号 G02F1/136
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