FIRST INTERCONNECTION DIELECTRIC LAYER FOR ELECTRONIC SEMICONDUCTOR DEVICE

摘要

PURPOSE: To make it possible to perform self-flattening by providing a first layer of tetraethylorthosilicate to which a layer of a self-flattening siloxane layer can be superimposed for a first mutual connecting dielectric layer. CONSTITUTION: A tetraethylorthosilicate layer 11 is stuck to a gate oxide layer 8 and a field oxide layer 10 by using an LPCVD reactor at the temperature of 700 to 750 deg.C. And a high degree of covering can be obtained in such a manner that the differences between the thickness of the layer 11 of the oxides on gate 8a, source 5 and drain 6 can become lower than 10%. By doing this, the layer 11 can be covered with the layer 12 of the self-flattening siloxane.