| 摘要 |
PURPOSE:To improve the quality and yield by irradiating a semiconductor element having a structure, in which an insulating film is formed on a semiconductor substrate, with ultraviolet rays at specific irradiation temperature for the purpose of eliminating electric charge produced and accumulated in the course of the manufacture of the element. CONSTITUTION:A semiconductor element such as a polycrystalline silicon resistance-loaded static RAM having a structure in which insulating films 3, 9 are formed on a semiconductor substrate 1 is irradiated with ultraviolet rays at irradiation temperature of from 100 deg.C or more to 250 deg.C or less to eliminate accumulated electric charges. Hereby, the rate of defective semiconductor elements is improved after testing high temperature operation thereof to a minimum at about 200 deg.C. |
