| 摘要 |
PURPOSE:To increase a capacitance value without making a plane area larger by forming a dielectric film with the electrode of a capacitor formed in the form of a cylinder having a bottom surface continuously from the bottom surface to the inner and outer surfaces of the cylinder. CONSTITUTION:After an oxide film 2 is formed on the surface of a board 1, an insulation film 3 is formed. After a gate electrode 4 of polycrystalline silicon is formed, ion implantation is performed to form a source/drain area 5. After an oxide film is grown on the surface by CVD, etchback is performed to form an insulation film 6. Further, after an insulation film 7 is formed on this surface, a hole 8 is opened. Next, after a polycrystalline silicon is grown, an impurity such as phosphorus is implanted. After photoresist 9 is applied on this surface, a pattern is formed and etching is performed to form a polycrystalline silicon electrode 10. Next, the photoresist 9 is separated, a polycrystalline silicon is grown on the surface, and an impurity of phosphorus, etc., is implanted to form an electrode 11. Next, anisotropic etching is performed for a time longer than the time in which the electrode 11 can be removed by anisotropic etching. Next, an electrode 13 composed of a dielectric film 12 and polycrystal silicon is formed and an insulation film 14 is accumulated. Then, it is opened and a metal wire 15 is formed. |
