| 摘要 |
<p>In a process for depositing a planarising material in spaces (5,6) between a pattern of regions (1,2,3), such as dye stripes or dots, on a substrate (4), the planarising material is deposited as a layer (7) over the pattern. The substrate is irradiated, from the reverse side, by a source (8) of radiation, such as UV, to which the pattern material is opaque and to which the planarising material is responsive such that it is rendered insoluble to a particular solvent. The radiation acts on only those parts (9-12) of the planarising material which are in the spaces. The remainder (13-15) of the planarising layer is then removed by use of the solvent. Alternatively, or additionally, an ITO or other UV transparent layer may be formed over the pattern and a layer of resist formed thereover. The radiation then passes through the spaces and acts on only the resist areas over the spaces to render them soluble. Those areas and the ITO layer beneath them are then removed by etching, leaving ITO areas accurately aligned with the pattern. The process may be used in the manufacture of LC displays or semiconductor devices.</p> |
