Heterojunction semiconductor devices and methods of making the same.

摘要

A semiconductor device comprises a first group III-V compound semiconductor layer (4, 24, 44) including indium (In), a second group III-V compound semiconductor layer (5, 25, 45) formed on the first group III-V compound semiconductor layer and including no indium (In), and at least a recess (6A, 30A, 110A) formed in the second group III-V compound semiconductor layer so that the first group III-V compound semiconductor layer is exposed within the recess. For example, the first group III-V compound semiconductor layer is made of a material selected from a group which includes indium aluminum arsenide (InAlAs) and indium gallium arsenide (InGaAs), and the second group III-V compound semiconductor layer is made of gallium arsenide.