| 摘要 |
<p>PURPOSE: To improve detection performance and a detection speed by providing a sense amplifier, a decoder, first, second precharge circuits, a reference bit line and a connection circuit in a storage device. CONSTITUTION: The storage device is constituted of decoder means 13, 14 for selectively connecting one line 38 of bit lines to the first input of the sense amplifier 11, first precharge means 28-30 connected to the bit lines 38-40 and precharging the bit lines 38-40 to a first voltage during a precharge period, second precharge means 23, 24 connected to the reference bit line 40 and for precharging the reference bit line 40 to a second voltage different from the first voltage during the precharge period and connection means 26, 27 for connecting the reference bit line 40 to the second input of the sense amplifier 11 for a prescribed time after the precharge period. Thus, the storage device provided with a nonvolatile memory cell array in a programmed state or an unprogrammed state in a format is obtained, and the detection performance and the detection speed are improved.</p> |
