Shorted-anode semiconductor device and methods of making the same.

摘要

A semiconductor device includes a substrate (21) of a first conductivity type. A first layer (22) of a second conductivity type is formed on one surface of the substrate (21) of the first conductivity type. A second layer (23) of the first conductivity type is formed on the first layer (22) of the second conductivity type. A third layer (24) of the first conductivity type is selectively formed on the other surface of the substrate (21) of the first conductivity type. A fourth layer (25) of the second conductivity type is formed on the other surface of the substrate (21) of the first conductivity type. The vertical dimension of the fourth layer (25) falls within a range of 5 to 20 mu m and is smaller than that of the first layer (22).