Memory device using thin film transistors having memory function and method for manufacturing same.

摘要

A memory device includes a memory element composed of a first thin film transistor (T21) having a memory function, and a select element composed of a second thin film transistor (T22) for selecting the memory element. A gate insulation film (22A) of the first thin film transistor (T21) has a charge storage function. A gate insulation film (22B) of the second thin film transistor (T22) does not have any charge storage function. If a plurality of the memory devices (T21, T22) are arranged in matrix form, this configuration can be used as E<2>PROM. By forming the first and second thin film transistors (T21, T22) simultaneously, it is possible to form the first and second thin film transistors (T21, T22) easily in the simple manufacturing steps.