| 摘要 |
This scan and repeat lithography system has high resolution capability, large effective image field size, and high substrate exposure speed, and comprises: (a) a substrate stage capable of scanning a substrate in one dimension and, when not scanning in said dimension, capable of moving laterally in a direction perpendicular to the scan direction so as to position the substrate for another scan; the substrate stage exposing the full substrate by breaking up the substrate area into parallel strips, and exposing each of the strips by scanning the length of the strip across a fixed illumination region; (b) a mask stage capable of scanning in the same direction as, and synchronized with, the substrate stage, at a speed faster than the substrate stage scanning speed by a certain ratio M; (c) an illumination subsystem having an effective source plane in the shape of a polygon, and capable of uniformly illuminating a polygon-shaped region on the mask; (d) a projection subsystem having an object-to-image reduction ratio M, and having a polygon-shaped image field of an area smaller than the desired effective image field size of the lithography system; and (e) provision of complementary exposures in an overlap region between the areas exposed by adjacent scans in such a way that a seam in the exposure dose distribution received on the substrate is absent between the scans, and such that the exposure dose delivered across the entire substance is uniform.
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