| 摘要 |
A method for the formation of a thin, high melting-point metal film such as W, on a substrate surface, by means of CVD, is disclosed herein. In this method, the inner wall of the CVD reaction tube and the surface of the at least part of the fittings disposed therewithin are covered with a metal nitride film, in the process of performing the CVD operation. The method permits the formation of a high quality film, and also prevents the deposition of the high melting-point metal on the inner wall of the reaction chamber, even if the CVD operation is repeatedly performed over a long period of time.
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