发明名称 |
Method of controlling heat treatment apparatus for substrate |
摘要 |
A semiconductor wafer (1) is thermally treated in a prescribed heating cycle while it is introduced into a furnace casing (4) of a furnace (4) and discharged therefrom. A temperature of a monitor chip (11) is measured by a radiation thermometer (16) immediately before introduction of the semiconductor wafer and memorized as an idling temperature. Then, while the furnace is heated up in order to make a measured temperature of the monitor chip agree with the idling temperature without the semiconductor wafer introduced, a temperature of the furnace casing is measured by a radiation thermometer (8) and memorized as a warm-up temperature. The furnace is controlled on the basis of the warm-up temperature or the idling temperature prior to sequential heat treatment of a number of semiconductor wafers.
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申请公布号 |
US4924073(A) |
申请公布日期 |
1990.05.08 |
申请号 |
US19890308094 |
申请日期 |
1989.02.08 |
申请人 |
DAINIPPON SCREEN MFG. CO., LTD. |
发明人 |
CHIBA, TAKATOSHI |
分类号 |
H01L21/26;C30B31/12;C30B31/18;F27B17/00;G05D23/00;G05D23/19;H01L21/205;H01L21/22;H01L21/31 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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