| 摘要 |
<p>PURPOSE: To enable separate access, density increase and miniaturization by forming a matrix which includes a source and a drain lines in parallel, a floating gate region between them and a control gate line superimposed on the lines and the region. CONSTITUTION: On a substrate, pairs of a drain line D and a source line S are provided in parallel, and a stripe-shaped field oxide film OC is arranged between the pairs of lines. Floating gate regions F are arranged in parallel on the film OC between pairs of source line S and drain line S, and on the region F, the source and drain lines S and D and the film OC, control gate lines G, which orthogonally intersect with the source and drain lines S and D, are provided in parallel. The source lines of the selected cells are all grounded and a voltage is applied to the drain line D and the gate line G to separately access the cells. Thus, separate access is enabled and cell density is increased and the cell is miniaturized.</p> |
