发明名称 BONDING WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To increase the strength of the title bonding wire so that the wire can be made extremely thinner, improved in fracture strength, and reduced in disconnection by constituting the bonding wire to have a specific chemical composition. CONSTITUTION:A bonding wire is constituted of (1) 1-5wt.% Cu, with the rest being Au; (2) 1-5wt.% Cu and 0.0003-0.01wt.% in total of more than one or two of Ca, Ge, Be, La, and In, with the rest being Au; (3) 1-5wt.% Cu and 1-5wt.% Pt, with the rest being Au; or (4) 1-5wt.% Cu, 1-5wt.% Pt, and 0.0003-0.01wt.% in total of more than one or two of Ca, Ge, Be, La, In, with the rest being Au. In addition, the diameter is 20mum or smaller, and the fracture strength is 4g or greater.
申请公布号 JPH02119148(A) 申请公布日期 1990.05.07
申请号 JP19890112579 申请日期 1989.05.01
申请人 NIPPON STEEL CORP 发明人 ONO TAKAHIDE;OZEKI YOSHIO
分类号 H01L21/60;C22C5/02;H01B1/02;H01L23/49 主分类号 H01L21/60
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