| 摘要 |
<p>PURPOSE:To apply the control of rewrite and readout with one control gate element by selecting a withstand voltage of a charge injection element of an EEPROM element lower than the withstand voltage of a readout element and connecting the charge injection element and the readout element to one control gate element. CONSTITUTION:The withstand voltage of a charge injection element 3 of an EEPROM element is selected lower than the withstand voltage of the readout element 6 and the ON-current of the element 3 is selected larger than the ON current of the readout element 6. Then a control gate element 8 is made ON state at rewrite to give a current Iw to the element 3 in a direction deciding by the potential of the capacitor 5 to inject an electric charge to a floating gate 4. In this case, the adverse effect of injection operation on other component is avoided depending on the state of the potential of the gate 4. In the case of readout, a voltage lower than the withstand voltage of the element 3 is applied to a read write but terminal 1 and the element 8 is turned on, then the current in response to the potential of the gate 4 flows to the readout element 6 and the signal is read out.</p> |
