| 摘要 |
PURPOSE:To obtain an electrode structure having no damaged layer at an interface between a contact region and an electrode metal layer by a method wherein the surface of a semiconductor in a contact region has a difference in level protruding from the surface of the semiconductor other than the contact region and the difference in level is made smaller than a thickness of an insulating layer. CONSTITUTION:In an electrode structure in which an insulating layer 12 composed of a dielectric is formed to be adjacent to a surface 11 of a semiconductor and which has a contact region bringing an electrode metal 15 into contact with the surface 11 of the semiconductor by removing one part of the insulating layer 12, the surface 11 of the semiconductor in the contact region has a difference in level protruding from the surface 11 of the semiconductor other than the contact region, and the difference in level is made smaller than a thickness of the insulating layer 12. In addition, a dielectric layer 14 is formed in a contact formation region on the surface 11 of the semiconductor; the semiconductor is etched by making use of the dielectric layer 14 as a mask; a protruding part is formed; the insulating layer 12 is formed on the semiconductor around the protruding part. Then, an impurity is introduced into the semiconductor from the protruding part; a surface 111 of the protruding part is etched; after that, the metal layer 15 is applied to the protruding part. |
