| 摘要 |
The junction-shorting type PROM, includes transistors with a highly doped region of the same conductivity type as the base provided between a pair of memory cells. The region is a base contact which commonly connects paired bases at a surface terminal connected to a word line. The base contact region also extends into the substrate, which is a collector, and prevents any influence of minority carries in each of the paired bases from diffusing into an adjacent base. The base contact region is isolated from emitter regions by a narrow groove filled with insulation material. The narrow groove is deeper than the emitter regions but shallower than the substrate. A memory cell block formed from the paired cells and the base contact narrow isolation grooves and the elimination of a buried base layer reduce stray capacitance and increase the current amplification.
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