发明名称 VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG NEGATIVER RESISTMUSTER
摘要 A negative resist pattern is formed from a positive resist containing a diazoquinone sensitizer by subjecting the imagewise exposed resist to heat treatment with a water-containing heating medium in the presence of a carboxyl- inactivating agent e.g. imidazoles, imidazolines, amines, quinones, aromatic ketones and basic carbonium dyes. The entire surface of the layer is exposed to radiation and then treated with an alkaline developer solution to leave a negative resist pattern. The carboxyl inactivator may be present in the resist or in the aqueous medium. The imagewise exposed resist P may be conveyed through hot water sprayer 2, dried in drier 3, uniformly exposed by lamps 4a and developed in developer 5. A wiper may be used in place of a drier and it a positive pattern is required, the imagewise exposed resist is fed directly to developer 5 and by-passes stations 2-4. <IMAGE>
申请公布号 DE3936502(A1) 申请公布日期 1990.05.03
申请号 DE19893936502 申请日期 1989.11.02
申请人 YAMATOYA & CO., LTD., TOKIO/TOKYO, JP 发明人 NUMAKURA, IWAO, TAMA, TOKIO/TOKYO, JP
分类号 G03F7/022;G03F7/20;G03F7/38 主分类号 G03F7/022
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