发明名称 |
Process for production of semiconductor device. |
摘要 |
<p>Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.</p> |
申请公布号 |
EP0366460(A2) |
申请公布日期 |
1990.05.02 |
申请号 |
EP19890311041 |
申请日期 |
1989.10.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKECHI, SATOSHI;NAKAMURA, YUKO KYASSURU ANNA-102, 6-47-29;MIHARA, YUKARI HIRUSAIDO AMUSU-A105, 5-25-10 |
分类号 |
G03F7/039;G03F7/075;G03F7/26;G03F7/36;H01L21/027;H01L21/302;H01L21/3065 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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