RADIATION-EMITTING SEMICONDUCTOR DIODE HAVING A SMALL-AREA CONTACT WITH A LARGER AREA SURFACE PROTECTION

摘要

1. Radiation-emitting semiconductor diode having a small-area contact, suitable for the connection of a glass fibre (41) as light guide, having a substrate body (10) and a semiconductor layer structure (11) and, situated on the surface of the layer structure, contact consisting of several metal layers, of which one layer (15) is made of gold and another layer (14) is made of a metal that acts as diffusion barrier for gold, and the region of the layer structure which is made of semiconductor material and which lies outside the junction of the small-area contact being made highly resistive by means of implantation, characterized in that the layer (14) provided as diffusion barrier for the gold of the contact (115) extends as large-area surface protection layer over the region (31) of the layer structure (11) made highly resistive.