| 摘要 |
<p>The invention provides a semiconductor device having stable resistance elements that are not affected by the electric fields from the nearby active and passive elements, the semiconductor device being obtained by providing a conductor layer connected to a constant potential on a high-resistance region which consists of polycrystalline or single crystalline silicon and which has a resistance of, for example, from about 100 G-ohms to about 5 T-ohms, via an insulating film. The invention further provides a static RAM using the resistance elements as load resistance of memory cells.</p> |
