| 摘要 |
PURPOSE:To obtain a pattern forming material capable of providing a resist pattern having high contrast, high resolution, with high precision when it is exposed to excimer laser light, etc. and then developed by constituting the material of a resin contg. pyridine or pyridinium groups, a compd. generating an acid photolytically, and a solvent. CONSTITUTION:The title pattern forming material consists of a resin contg. pyridine or pyridinium groups, a compd. generating an acid photolytically, and a solvent which dissolves the resin and the compd. The resin contg. pyridine or pyridinium groups is a basic resin causing scarce absorption in a far ultraviolet region. But, when a compd. which generates photolytically an acid is added to the resin, the exposed part of the mixture becomes acidic and neutralizes basicity of the resin. Thus, a negative (in this case) pattern is obtd. by the development with an acidic soln. By this constitution, a superfine resist pattern having sufficiently good shape is formed by the exposure with KrF excimer laser. |
