发明名称 ESD protection circuit for MOS integrated circuits
摘要 An ESD protection circuit, suitable for use as part of an integrated circuit, limits the voltage potential at the contacts of the integrated circuit to a voltage potential difference range relative to, though extending beyond the voltage source potentials of the circuit protected. The ESD protection is effective regardless of whether the integrated circuit is powered. The ESD protection circuit includes a clamp subcircuit for limiting the voltage potential at a clamp point to a first voltage range approximately defined by the voltage source potentials and a voltage offset subcircuit, coupled between the clamp point and an integrated circuit contact, to establish a second voltage range encompassing the first voltage range. The voltage offset subcircuit conducts current between the clamp point and the contact to limit the voltage potential at the contact to the second voltage range.
申请公布号 US4922371(A) 申请公布日期 1990.05.01
申请号 US19880265572 申请日期 1988.11.01
申请人 TELEDYNE SEMICONDUCTOR 发明人 GRAY, RICHARD L.;YAN, RAYMOND CHAN-MAN;ROSENTHAL, BRUCE
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项
地址