| 摘要 |
PURPOSE:To reduce the charging level in alignment mark thereby augmenting the precision in alignment without fluctuating the manufacturing process of semiconductor device by a method wherein a surface protective film is patterned on a wiring film electrically continuous to a semiconductor substrate. CONSTITUTION:A surface protective film 5 in an alignment mark is formed in a specified pattern on a wiring film 4 occupying a little space in the alignment mark. When the alignment mark region 6 is irradiated with electron beams in scanning mode, the signal intensity of reflected electron or secondary electron fluctuates within the boundary between the wiring film 4 and the surface protective film 5. The electron beam irradiated position on a semiconductor device can be detected by sensing the fluctuation in the said signal intensity. At this time, the surface protective film 5 in the alignment mark only is charged by the irradiation with the electron beam while the electron irradiating the wiring film 4 constituting the alignment mark excluding the surface protective film 5 runs into a silicon substrate 1 through a contact window 3 not to be charged. Consequently, the charging level in the alignment mark is reduced: it enables the alignment during the irradiation with electron beam to be made for augmenting the precision in alignment. |
