| 摘要 |
An input protection device for a semiconductor integrated circuit, comprising a semiconductor substrate of one conductivity type, a first insulator layer formed on the substrate and having an opening extending to the surface of the substrate, a doped region formed in the opening for contacting the substrate, the doped region being of the other conductivity type and forming a p-n junction at its interface with the substrate, an input protection resistor region having a portion contacting the doped region through the opening in the first insulator layer and a portion overlapping the first insulator layer, a second insulator layer having a portion covering the input protection resistor region, the portion of the second insulator layer having an opening extending to the surface of the resistor region, the opening in the second insulator layer being at least in part in registry with the opening in the first insulator layer, and a metallized input wiring layer formed on the second insulator layer and having a region extending through the opening in the second insulator layer to the surface of the protection resistor region. The p-n junction formed between the substrate and the doped region provides a diode to be reversed biased by the voltage to be normally applied to the input transistor and is operative to pass therethrough a current with a high voltage surge.
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