| 摘要 |
PURPOSE:To contrive a proper etching process by etching insulating film by the use of a mask corresponding to the depth of a contact hole. CONSTITUTION:A photomask 11a is provided on the upper side of a resist 13a and only a place of opening 12a is formed on the photomask and its opening corresponds to a contact hole. Once irradiating, an opening 14a is formed. Then the contact hole is formed by etching an insulating film 10 that is exposed to the opening 14a with a RIE process. Then, after removing the resist 13a, a resist 13b is applied newly. A photomask 11b is provided and an opening 12b is formed at a position corresponding to the contact hole. Further, an opening 14b is formed with irradiation. Then a contact hole T1 is formed by etching. Even if etching thicknesses of the insulating film 10 are different, etching time in response to the thickness is secured. Consequently, no overetching, insufficient etching and the like take place in this manufacturing process. |
