| 摘要 |
<p>PURPOSE:To prevent the generation of a short-circuit between a gate bus line and a drain bus line by a method wherein, after the gate bus line and a gate electrode are formed on an insulative substrate 1, side etchings are further performed in a degree that an insulating film on the gate electrode is removed. CONSTITUTION:An NiCr film 11 is formed on a glass substrate (a transparent insulative substrate) 1 and moreover, an SiNX film 12 is formed as an insulating film. Then, unnecessary parts are selectively removed. Subsequently, side etchings are performed in a degree that the film 12 is removed from the upper part of a gate electrode to form an interlayer insulating film 8 on the film 11 constituting a gate bus line GB. Then, an SiNX film (a gate insulating film) 2, an operating semiconductor layer 3 and an insulating film 4 are formed. Subsequently, a contact layer 6 and a metal film 7 for drain and source electrode use are formed and source and drain electrodes S and D and a drain bus line DB are formed. In an obtained TFT, as the SiNX film 8, which is used as the interlayer insulating film, is interposed between the gate and drain bus lines GB and DB in addition to the film 2, the risk of the generation of a short-circuit between the bus lines is significantly reduced.</p> |
