| 摘要 |
PURPOSE:To form a photovoltaic device in high quality by a method wherein one conductivity type semiconductor layer, the first intrinsic semiconductor layer formed using glow discharge by the first frequency and the second intrinsic semiconductor layer formed using glow discharge by second frequency lower than the first frequency are laminated. CONSTITUTION:The first I type layer 4 around 20-1000Angstrom thick comprising non-doped alpha-Si is formed on a P type layer 3 using glow discharge by high frequency and then the second I type layer 5 around 5000Angstrom thick comprising non-doped alpha-Si is formed on the first I type layer 4 using glow discharge by low frequency 30Hz-500kHz. Furthermore, the third I type layer around 20-1000Angstrom thick comprising non-doped alpha-Si is formed on the second I type layer 5 using glow discharge by high frequency, an N type layer 7 around 300Angstrom thick comprising phosphorus-doped alpha-Si is formed on the third I type layer 6 using glow discharge by high frequency, finally a rear side electrode 8 comprising Al, Ti, TiAg, etc., is formed on the N type layer 7. |
