发明名称 THIN FILM OPTOELECTRIC TRANSDUCER
摘要 PURPOSE:Not to cause a decrease in a fill factor in large conditions of power generation electromagnetic waves like under sun light by forming a printed electrode through printing and firing of conductive paste with phenol resin as a binder. CONSTITUTION:The values of a solar cell having an Al rear side electrode for comparing open voltage Voc, short circuit current density J3c, fill factor FF, conversion efficiency eta and series resistance R3 of a solar cell having an area of 1cm<2> in which, with phenol resin as a binder, paste produced by mixing powders of Ni, Ni+Ag, Ag, Mo, W, and C having a maximum grain size of 30mum four times the weight of resin is applied as a conductive material, it is fired for about 30min. at 150 to 170 deg.C, and it is made a printed rear side electrode are, shown at the same time. One in which Mo powder is used as a conductive material has FF and eta higher than one in which Ni or other materials are used as conductive materials. R3 is smaller by a factor of about 10 or more and it shows performance of about the same as one in which deposited Al is used as a rear side electrode. If one in which a silan coupling agent which is an interface activator is mixed with paste composed of Mo powder and phenol resin, characteristics are further improved.
申请公布号 JPH02117177(A) 申请公布日期 1990.05.01
申请号 JP19880270417 申请日期 1988.10.26
申请人 FUJI ELECTRIC CO LTD 发明人 HAMA TOSHIO;SATO KOKI;ICHIKAWA YUKIMI
分类号 H01L31/04 主分类号 H01L31/04
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