发明名称 |
HALBLEITERLASER |
摘要 |
A semiconductor laser includes an anode region of a first conductivity type made of a highly doped region, an active layer adjacent the anode region, a channel region made of a high-resistivity region and adjacent the active layer, a cathode region of a second conductivity type at one end of the channel region which is made of a highly doped region, and a gate region that surrounds at least part of said channel region and which is made of a highly doped region of the first conductivity type. The anode region and channel region have a wider band gap than that of the active layer. |
申请公布号 |
DE3231579(A1) |
申请公布日期 |
1983.05.05 |
申请号 |
DE19823231579 |
申请日期 |
1982.08.25 |
申请人 |
HANDOTAI KENKYU SHINKOKAI |
发明人 |
NISHIZAWA,JUNICHI;OHMI,TADAHIRO;MORISHITA,MASAKAZU |
分类号 |
H01S5/042;H01S5/40;H04B10/155;(IPC1-7):H01S3/18 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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