| 摘要 |
PURPOSE:To constitute a level converting circuit where its output has sufficient amplitude with two MOSFETs, by decreasing the effect of the substrate effect through the forming of the MOSFETs on independent substrates, respectively. CONSTITUTION:Two N-channel MOSFETs Q1, Q2 are connected in series, the drain of the FETQ1 is connected to a power supply voltage VDD and the source of the FETQ2 to a power supply voltage VEE. The MOSFETs Q1 and Q2 are formed on independent substrates, respectively. That is, the MOSFETs Q1, Q2 are electrically isolated with each other, by forming them on substrates of P-well isolated on one silicon semiconductor substrate. |
