| 摘要 |
PURPOSE:To enable measurement of ion current even if a substrate is a non-conductor and even if vapor arrives at only the substrate inside by bringing a sheathed thermocouple into contact with the vapor deposition surface of the substrate, measuring the temp. of the substrate, measuring the current flowing in the sheath of the thermocouple and determining the ionization rate of the vapor. CONSTITUTION:A thin film forming device melts a material 2a to be deposited by evaporation in a vacuum vessel 1 at a high temp. in a crucible 2, ejects the vapor 2b of the molten material 2a through the small hole 17 provided to the crucible, bringing electrons 18 into collision against the vapor 2b thereof to ionize the vapor 2b and accelerates the ions by the electric field of an accelerating power source 16 applied to an accelerating electrode 6 thereby depositing the ions by evaporation on the substrate 8. A sheathed thermocouple 10 is brought into contact with the vapor deposition surface of the substrate 8 and the temp. of the substrate 8 is measured. The ion current flowing in the sheath 19b of the thermocouple 10 is then measured and the ionization rate of the vapor 2b is determined. |
