| 摘要 |
<p>PURPOSE:To realize high density packaging by burying a dielectric in a hole which is provided to interconnect each pattern to an insulating layer between an upper layer wiring pattern and a lower layer wiring pattern. CONSTITUTION:A hole 5 having an arbitrary hole sectional area S and a thickness (d) is formed in an insulator 3. A paste-form dielectric 6 having an arbitrary dielectric constant is buried in the hole 5 and brought into contact with a lower layer pattern 4; at the same time, an upper layer wiring pattern 2 is formed to come into contact with the dielectric 6. The pattern 4 is thereby connected to the pattern 2 by the dielectric 6. A capacity of a capacitor is determined by a thickness (d) of the insulator 3, a sectional area S of the hole 5 and a dielectric constant of the dielectric 6. Since the ratio occupied by a chip capacitor is thereby reduced as compared with a conventional one, higher density packaging is realized.</p> |
