| 摘要 |
<p>PURPOSE:To isolate a source and a drain with good reproducibility by forming a high resistance area by ion-implanting a group III element or a compound of the same into a silicon thin film located between contact areas of source and drain electrodes. CONSTITUTION:When a group III element such as boron or a compound of the same is doped into an amorphous semiconductor thin film layer into which a groups V element such as phosphorus or a compound of the same is doped, carrier compensation is achieved. If in this occasion the dopings of the fifth and third group elements are performed by ion-implantation, both distributions in direction of depths thereof agree with each other to an enough level for such compensation. Using this phenomenon, a gate electrode 1, a gate insulating layer 2, and an amorphous silicon thin film 3 are successively formed on an insulating substrate and a group V element or a compound of the same is ion- implanted without use of a mask. Further, after formation of a source-drain electrode 5, a group III element or a compound of the same are ion-implanted into a thin film 3 located between the electrode 5 and a contact area with the same to form a high resistance area 7.</p> |
