| 摘要 |
<p>PURPOSE:To simplify the structure and manufacturing process of a thin-film transistor and, at the same time, to improve the characteristics of the transistor by irradiating a semiconductor layer with a light having energy stronger than the energy gap of the layer after forming the layer. CONSTITUTION:A semiconductor layer 4 is irradiated with a light having energy stronger than the energy gap of the layer 4 after forming the layer 4. When the layer 4 is irradiated with the light in such way, occurrence of a photoelectric current can be suppressed in a nonoperating state, because the optical deterioration of the amorphous silicon film 4 results in a decline in photosensitivity. Therefore, the thin-film transistor having high transistor characteristics can be obtained by the simple manufacturing process.</p> |
