发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE PROVIDED WITH MICRO-LENS
摘要 PURPOSE:To form a micro-lens in a simple process so as to obtain a laser device capable of efficiently condensing laser rays by a method wherein the micro-lens is formed on a light outputting part. CONSTITUTION:A part of an optical waveguide region 7 is etched through a RIBE or the like to enable a laser device to output a laser beam from the top surface, a growth layer is formed on the etched wedge-like part first, and a transparent substance 11 to which quartz can adhere is filled onto the growth layer to make the surface flat. Next, a quartz film 12 is attached to a part of the transparent substance 11 where a micro-lens is mounted, and an SiON micro-lens 13 is formed thereon using a laser CVD. Then, the quartz film 12 is locally heated with a CO2 laser to selectively form an SiON film out of a mixed gas of SiH4, NO, and NH3, and the formed SiON film is bell-shaped and has a smooth surface and its focal distance can be controlled by its size and thickness. Therefore, a laser device which is able to efficiently condenses laser light outputted from the top surface by the reflection of the laser light by an etched side face 9 inclined by 45 degrees the top surface and an active layer 3 can be obtained.
申请公布号 JPH02114687(A) 申请公布日期 1990.04.26
申请号 JP19880268667 申请日期 1988.10.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 NANBA HARUMI;TAKAHASHI SHOGO
分类号 H01S5/00;G02B6/42;H01S3/00;H01S5/022;H01S5/18 主分类号 H01S5/00
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