| 摘要 |
PURPOSE:To improve insulation and pressure-tightness of a gate oxide film to be coated on the surface by making surface roughness under specific value in the centerline average roughness expression by mirror polishing. CONSTITUTION:A mirror-finished silicon wafer uses alkalescent polishing liquid containing submicron silica particles as polishing-grinding grains while making final polishing speed under 0.01mum/min for sufficient polishing and its surface roughness under 0.5nm in the centerline average expression. Microsurface roughness of a mirror wafer and an insulation pressure-tightness characteristic are related and when its roughness reaches scores of Angstrom , it comes into question, however, this roughness of a mirror polishing silicon wafer is smaller by two digits as compared therewith and such microunevenness does not influence insulation-tightness of an oxide film. In this way, at the time of forming a semiconductor electronic device an oxide is coated on the mirror-finished silicon wafer so that its insulating pressure-tight characteristic can be improved above expected value as well as stabilized.
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