BURIED TYPE SEMICONDUCTOR LASER ELEMENT,申请号JP19880269021-传众专利搜索

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发明名称	BURIED TYPE SEMICONDUCTOR LASER ELEMENT
摘要
申请公布号	JPH02114689(A)	申请公布日期	1990.04.26
申请号	JP19880269021	申请日期	1988.10.25
申请人	FUJI ELECTRIC CO LTD	发明人	WATANABE YASUMASA
分类号	H01S5/00	主分类号	H01S5/00
代理机构		代理人
主权项
地址

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