| 摘要 |
PURPOSE:To prevent the generation of a hillock, which is extended from the surface of a metal wiring to the upward direction, and hillocks, which are extended from the sidewall parts of the metal wiring to the lateral directions, by a method wherein impurity ions are implanted in the whole surface including the sidewalls of the patterned metal wiring by a spin ion-implantation method and the whole surface including the sidewalls of the metal wiring is brought into an amorphous state. CONSTITUTION:A semiconductor substrate with a patterned Al wiring formed on it is placed on a rotating target 19. Then, the target 19 is slanted in such a way that an injection angle (theta) becomes 45 deg. to rotate the target in the direction shown by an arrow B and an ion beam (m) is irradiated. The beam is stretched in the vertical direction by Y deflecting plates 16 and moreover, is stretched in the horizontal direction by X deflecting plates 17 and passes through a mask 18 to incide in the substrate placed on the target 19. In such a way, a spin ion-implantation is realized, impurity ions are implanted in the whole surface including the sidewalls of patterned metal wiring and the whole surface including the sidewalls of the metal wiring is brought into an amorphous state.
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