| 摘要 |
<p>PURPOSE:To realize the improvement of a deposition rate by a selective metal CVD method and the prevention of the generation of dust due to a peeling of a metal film by a method wherein, after a dicing line part is covered with sn insulating substance film, the metal film is deposited. CONSTITUTION:An insulating film 3 is formed on a semiconductor substrate 1. Then, contact holes 2 are opened in the film 3 by a photo-engraving technique and the holes 2 are filled with a metal film 4 by a selective metal CVD method. Lastly, a dicing line part 5 is formed by a photoengraving technique. In such a way, as the part 5 is covered with the film 3 at the time of deposition of the film 4 by the selective metal CVD method, feed reaction gas is consumed only in the holes 2 and the deposition rate of the film 4 is increased. Moreover, as the film 4 is not deposited at the place, where a peeling of the film 4 is easy to generate and a deposition ares is large like the dicing line part, of a pattern, the generation of dust can be prevented.</p> |
