发明名称 THIN FILM FORMATION DEVICE
摘要 PURPOSE:To form a thin film all over uniformly even on a large-sized substrate by arranging a reaction gas supply part consisting of a plurality of pipes having many reaction gas blow-out openings between an active seeds supply part provided with many active seed blow-out openings on a flat plate covering the whole substrate and the substrate. CONSTITUTION:In an active seed supply part, quartz plates 13a and 13b cover an overall substrate while being provided so that they may be in parallel with the substrate 9. A reaction gas supply part has a construction wherein gas storage parts 21a and 21b uniformly distributing a first reaction gas 3 to be supplied from the first reaction gas supply openings 2a and 2b and a plurality of pipes 20 with open both ends having many reaction gas blow-out openings 17 are connected, and a plurality of pipes 20a cover the whole substrate while being arranged between the active seed supply part and the substrate so that they may be in parallel with the substrate 9. Accordingly, the first reaction gas 3 and active seeds are uniformly supplied on the substrate 9 for being mixed, and as the result of a chemical change caused by this mixture, thin film formation speed is made uniform inside a reaction region to form the thin film. Thereby, the thin film is uniformly formed on the whole substrate.
申请公布号 JPH02114530(A) 申请公布日期 1990.04.26
申请号 JP19880268746 申请日期 1988.10.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 ODA MASAO;KINOSHITA YOSHIMI;HAYAMA MASAHIRO
分类号 H01L21/205;C23C16/44;C23C16/452;C23C16/455;H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/205
代理机构 代理人
主权项
地址