| 摘要 |
PURPOSE:To execute a heat treatment used to stabilize a polycrystalline silicon film without causing a temperature rise at a surface part of a semiconductor substrate by a method wherein the polycrystalline silicon film is irradiated with a pulsed laser beam and is heated. CONSTITUTION:A polycrystalline silicon film 9 is irradiated with a pulsed laser beam by an excimer laser (XeCI); it is activated. Since the polycrystalline silicon film 9 has an absorption coefficient of nearly 100% with reference to ultraviolet rays and has a film thickness of about 50 to 800Angstrom , the pulsed laser beam radiated from the laser is absorbed completely by the polycrystalline silicon film 9. Accordingly, the lesser beam does not reach the substratum side of the polycrystalline silicon film 9; a semiconductor substrate is hardly heated. Thereby, the polycrystalline silicon film can be heated effectively without causing a temperature rise of the semiconductor substrate; a film quality to realize a high resistance and to stabilize a resistance can be controlled. |
