Arrangement and method for producing an image sensor

摘要

The invention relates to an arrangement and a method for producing image sensors. The photodiodes and associated amplifier circuits or read-out circuit are arranged such that MOS transistors are fixed in a first level in or on a high-resistance substrate and photodiodes are fixed in a second level. The MOS transistors are produced using conventional MOS technology. The semiconductor layers for the photodiodes are grown on the insulated electrical contacts and leads of the transistors using differential MBE.