| 摘要 |
PURPOSE:To make it possible to evaluate in a short time the damp-proof property by leaving a semiconductor device under high temperature and high humidity after permeating into the semiconductor device a solvent that corrodes metalic materials and developing in a short time disconnection due to corrosion in a metallic wiring material. CONSTITUTION:A semiconductor device 1 to be tested in which aluminum wiring is installed is thrown in a high pressure vessel 2, and in this vessel brine 3 with salt of 3-23wt% is added. The pressure in the high-pressure vessel 2 is made at 5atm by a high-pressure air cylinder. In this state the vessel 2 is left for 16hr. Then the brine permeats into the device 1. Next, the device 1 is put in a high- temperature, high-humidify tank 7 of 85 deg.C and 100% RH, and left in it. Then the salt water 3 further permeates into the device 1 to reach eventually the surface of a semiconductor chip. If the chip has a defect that an aluminum wiring is exposed on its surface, the wire will be cut by corrosion in a short time. It is, therefore, possible to evaluate in a short time the damp-proof property and in this way breakage can be avoided because the high temperature condition is not required as in the PCT method. |
