| 摘要 |
PURPOSE:To offer the manufacturing method of a semiconductor, in which a gate electrode does not come off and the degradation in withstanding voltage of said electrode can be prevented. CONSTITUTION:An SiO2 film 22 is formed on a p type silicon substrate 21 at a relatively high temperature. Thereafter, an MoSi film 23 is formed on said SiO2 film 22 by an evaporating method. Then a resist pattern 24 is formed on said MoSi film 23 by a photoetching method. It is removed by an ion etching method and a gate electrode 25 is formed. Then the resist pattern 24 is removed. With the gate electrode 25 as a mask, the SiO2 film 22 is etched by aqueous solution of NH4F and the like, and a gate insulating film 26 is formed. Then n<+> type source and drain regions 27 and 28 are formed by a self-aligning method. Thereafter a polycrystal silicon film 29 is formed by a CVD method at a relatively low temperature (550-650 deg.C). Then heat treatment of said polycrystal silicon film 29 is performed in an oxidizing atmosphere at a relatively high temperature (800-1,100 deg.C), so that the film 29 is transformed into a thermal oxide film 30. An interlayer insulating film 31 is further coated on said thermal oxide film 30 by a CVD method. |
