| 摘要 |
PURPOSE:To obtain a high performance semiconductor device by accurately positioning a semiconductor region and a conductive layer through mutual self- alignment within the element forming region for said semiconductor region and by configurating them with small area on the substrate. CONSTITUTION:An insulating layer 48, which continuously extends over insulating regions 20, 21, an insulating layer 40 and conductive layers 43 and 44, provides windows 45 and 46 through which conductive layers 43 and 44 are exposed to the external side and a window 47 at the location opposing to a conductive layer 39, is provided and a window 49, which exposes the conductive layer 39 to external side, is formed at an insulating layer 40 under the window 47 of insulating layer 48. Thereafter, the titled semiconductor device can be obtained by forming conductive layers 50 and 51 which are connected to the conductive layers 43, 44 through the windows 45 and 46 of the insulating layer 48 and are extending over the insulating layer 48, and also forming an conductive layer 52 which is connected to the conductive layer 39 through the windows 47 and 49 of the insulating layers 48 and 40 and is extending over the insulating layer 48. |
