| 摘要 |
PURPOSE:To alleviate stress in an active layer and to obtain long life of an element, in a (GaAl)As series visible laser, by providing a buffer layer, wherein an AlAs crystal mixing ratio (z) is about 0.3 or more and a thickness is about 6mum-20mum. CONSTITUTION:On a Ga1-xAlxAs mixed crystal substrate (0.02<=x<=0.4) (thickness is d1)1, an N type Ga1-yAlyAs layer (0.5<=y<=0.8) (thickness is d2)2, a Ga1-z AlzAs layer (0.15<=Z<=0.35) (thickness is d3)3, a P type Ga1-uAluAs layer (0.5<= u<=0.8)(thickness is (d4)4, and a P type GaAs layer 5 are grown by a liquid phase epitaxial method. The layer 2 and the layer 4 have a reverse conductive type. The mixed crystal substrate is selected so as to satisfy the relationship of Z- 0.075<=x<=z+0.025. Then an Al2O3 film formed on a layer 5 is selectively removed in a stripe shape with a width of 5mum. Zn is diffused through a window, and a Zn diffused region 8 is formed. After the Al2O3 film has been removed, Cr-Au is formed as a P side electrode 7, and AuGeNi-Au is formed as an N side electrode 6 by evaporation. Parallel resonating reflecting surfaces are formed on facing end surfaces 9 and 10 of the semiconductor laser device by cleavage. |
