发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve reliability such as moisture resistance or the like by connecting first and second metallic interconnections through an opening in an interlayer insulating film while positioning a pressure bonded section of a bonding wire over the opening. CONSTITUTION:A first metallic interconnection 3 is provided on an insulating film 2 on a semiconductor substrate 1 so as to be connected with an internal circuit. An interlayer insulating film 4 is provided thereon so as to cover the first metallic interconnection 3. The interlayer insulating film 4 is provided with a circular and small diameter opening 5 in a region over the first metallic interconnection 3 where an electrode pad is to be formed. A second metallic interconnection 6 is then provided on the electrode pad forming region over the interlayer insulating film 4 including the opening 5. The second metallic interconnection 6 is electrically connected to the first metallic interconnection 2 through the opening 5 while the region over the opening 5 is covered with a pressure bonded section 25a of a bonding wire 25 connected to the second metallic interconnection 6. In this manner, the laminated insulating films of different materials can compensate each other so that reliability of the interlayer insulating film such as waterproof or resistance to cracks can be improved.
申请公布号 JPH02113533(A) 申请公布日期 1990.04.25
申请号 JP19880266559 申请日期 1988.10.22
申请人 NEC CORP 发明人 YUASA TETSUJI;FUKUI HIROKI
分类号 H01L23/52;H01L21/3205;H01L21/321;H01L21/60;H01L21/603 主分类号 H01L23/52
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