| 摘要 |
Raman spectroscopy is used in situ to determine the nature and thickness of epitaxial growth while the epitaxially grown material is still in place in the reactor's growth chamber. A Raman signature characteristic of biatomic silicon layers in silicon germanium superlattices is detected. Through the detection and monitoring of this signature, the superlattice growth process can be controlled actively during growth to ensure that the desired superlattice configuration is achieved. <IMAGE> |
